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IOP Publishing, Japanese Journal of Applied Physics, 8R(44), p. 6113, 2005

DOI: 10.1143/jjap.44.6113

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Excitation-Power Dependence of Free Exciton Photoluminescence of Semiconductors

Journal article published in 2005 by Hajime Shibata, Masamichi Sakai, Akimasa Yamada, Koji Matsubara, Keiichiro Sakurai, Hitoshi Tampo, Shogo Ishizuka ORCID, Kyoung-Kook Kim, Sigeru Niki
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We have derived an analytical formula for the excitation-power dependence of the free exciton photoluminescence (PL) intensity. It has been found that the PL intensity I depends on the power of the excitation laser L as I∝L k , where k is the power index. We have deduced the analytical formula that describes the value of k for the free exciton PL emission under the above-band-gap excitation conditions. The results indicate that the value of k is in the region of 1<k<2 depending on both the value of L and material properties such as radiative and competitive nonradiative recombination probabilities.