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IOP Publishing, Japanese Journal of Applied Physics, 7A(43), p. L907, 2004

DOI: 10.1143/jjap.43.l907

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Successful Growth of In<sub>x</sub>Ga<sub>1-x</sub>As (x&gt;0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation

Journal article published in 2004 by Yukinaga Azuma, Yoshito Nishijima, Kazuo Nakajima, Noritaka Usami, Kozo Fujiwara, Toru Ujihara ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We attempted to utilize a GaAs single crystal with preferential orientation as a seed to obtain an InGaAs single bulk crystal. The preferential orientation of the InGaAs bulk crystal was determined as [110] in a preliminary experiment to utilize multiple seed crystals with random orientations. By subsequent zone growth of InGaAs on GaAs(110), an In x Ga1-x As (x>0.18) single bulk crystal with a diameter of 15 mm and a length of 13 mm was successfully obtained on the seed without a compositionally graded InGaAs layer. The large lattice mismatch between GaAs and InGaAs was likely to be accommodated by an array of thin columnar grains at the interface.