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IOP Publishing, Japanese Journal of Applied Physics, 6B(43), p. L806, 2004

DOI: 10.1143/jjap.43.l806

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Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure

Journal article published in 2004 by Atsushi Onodera, Yutaka Onishi, Nobuhiko Nishiyama, Catherine Caneau, Fumio Koyama, Chung-En Zah
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A vertical-cavity intensity modulator using a 1.55 µm surface-emitting laser (VCSEL) structure has been demonstrated. A contrast ratio of more than 10 dB with a low voltage of 1 V was obtained with an input light power of 1.9 dBm. The insertion loss was as low as 3.8 dB in the on state at a bias voltage of 1 V. The proposed device has potential for low insertion loss, low modulation voltage and polarization-insensitive operation.