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IOP Publishing, Japanese Journal of Applied Physics, 9A(43), p. L1147, 2004

DOI: 10.1143/jjap.43.l1147

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Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

Journal article published in 2004 by Masataka Higashiwaki ORCID, Toshiaki Matsui
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We report on the barrier thickness dependence of the electrical properties and DC device characteristics of Al0.4Ga0.6N/GaN heterostructure field-effect transistors (HFETs). The HFET structures with 8–25-nm-thick AlGaN barrier layers were grown on sapphire substrates by plasma-assisted molecular-beam epitaxy. All of the fabricated HFET devices with a gate length of 1 µm showed a good DC performance and an excellent pinch-off characteristic. The extrinsic transconductance of the HFET devices increased from 185 to 360 mS/mm with decreasing AlGaN barrier thickness from 25 to 8 nm, while the maximum drain current for a gate bias of +1.0 V decreased from 1.1 to 0.68 A/mm.