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IOP Publishing, Japanese Journal of Applied Physics, 4S(43), p. 2255, 2004

DOI: 10.1143/jjap.43.2255

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Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Journal article published in 2004 by Akira Endoh, Yoshimi Yamashita, Keiji Ikeda, Masataka Higashiwaki ORCID, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We fabricated non-recessed-gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) with a gate length L g of 120 nm. As gate metals, Ni/Pt/Au and Mo/Pt/Au were used. The Ni/Pt/Au-gate HEMTs with rapid thermal annealing (RTA) at 500°C were normally-off at a gate-source voltage V gs of 0 V, indicating E-mode operation. Moreover, the Mo/Pt/Au-gate HEMTs also showed E-mode device operation without RTA. The fabricated E-mode HEMTs with both gate metals showed high RF performance. We obtained a cutoff frequency f T of more than 50 GHz and a maximum oscillation frequency f max of approximately 100 GHz.