Published in
IOP Publishing, Japanese Journal of Applied Physics, Part 2, No. 5B(41), p. L540-L542, 2002
DOI: 10.1143/jjap.41.l540
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High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy
Journal article published in 2002 by
Masataka Higashiwaki 
,
Toshiaki Matsui
,
Toshiaki Matsui
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