Published in
IOP Publishing, Japanese Journal of Applied Physics, Part 1, No. 2B(41), p. 1094-1098, 2002
DOI: 10.1143/jjap.41.1094
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Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
Journal article published in 2002 by
Akira Endoh,
Yoshimi Yamashita,
Keisuke Shinohara,
Masataka Higashiwaki 
,
Kohki Hikosaka,
Takashi Mimura,
Satoshi Hiyamizu,
Toshiaki Matsui
,
Kohki Hikosaka,
Takashi Mimura,
Satoshi Hiyamizu,
Toshiaki Matsui
This paper was not found in any repository, but could be made available legally by the author.
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