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IOP Publishing, Japanese Journal of Applied Physics, 8R(40), p. 4920, 2001

DOI: 10.1143/jjap.40.4920

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Design and Fabrication Process of Optically Pumped GaInAsP/InP Stripe Laser with Resonant Pumping for High-Power Operation

Journal article published in 2001 by Yutaka Onishi, Fumio Koyama, Kenichi Iga
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A high-power GaInAsP/InP semiconductor laser optically pumped by a 0.98 µm high-power broad area laser has been proposed. A vertical resonant pumping scheme is introduced to increase the absorption efficiency of the pump light. It is shown that the fraction of absorbed pump light can be increased up to 99% by inserting a highly reflective mirror with a reflectivity of 99%. In addition, a vertical resonant cavity using a GaAs/AlAs distributed Bragg reflector (DBR) was formed by a low-temperature wafer bonding technique.