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IOP Publishing, Japanese Journal of Applied Physics, 7B(39), p. L720, 2000

DOI: 10.1143/jjap.39.l720

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DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy

Journal article published in 2000 by Masataka Higashiwaki ORCID, Masataka Higashiwaki Masataka Higashiwaki, Takahiro Kitada, Takahiro Kitada Takahiro Kitada, Toyohiro Aoki, Toyohiro Aoki Toyohiro Aoki, Satoshi Shimomura, Yoshimi Yamashita, Akira Endoh Akira Endoh, Akira Endoh, Kohki Hikosaka, Takashi Mimura, Takashi Mimura Takashi Mimura, Toshiaki Matsui, Toshiaki Matsui Toshiaki Matsui and other authors.
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

In this paper, we report on the material and device characteristics of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobility in the (411)A HEMT was 2.5 times higher at 15 K and 1.3 times higher even at room temperature than that in a HEMT grown on a conventional (100) InP substrate. The (411)A HEMTs with 50 nm gates provided excellent DC and RF device characteristics.The maximum transconductance was as high as 1.1 S/mm, and the cutoff frequency reached 355 GHz.