X-ray rocking curve measurements have been carried out in order to investigate the twisting and tilting in hydride vapor phase epitaxy (HVPE) and metalorganic vapor phase epitaxy (MOVPE) GaN films fabricated by an epitaxial lateral overgrowth (ELO) technique. The twist angle is directly determined by means of grazing incidence angle X-ray diffraction. It is found that these angles in both MOVPE and HVPE films are significantly reduced by the ELO technique especially for the twist angles. In the MOVPE-ELO GaN film, the tilt and twist angles depend on the stripe direction of the mask pattern, which is closely related to the difference of the growth process.