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Published in

IOP Publishing, Japanese Journal of Applied Physics, 12A(38), p. L1357, 1999

DOI: 10.1143/jjap.38.l1357

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Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

Journal article published in 1999 by Benjamin Damilano ORCID, Stéphane Vezian, Nicolas Grandjean, Jean Massies
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

GaInN/GaN quantum dots (QDs) are grown by molecular beam epitaxy making use of the Stranski-Krastanov growth regime. In situ scanning tunneling microscopy (STM) evidences the formation of three-dimensional GaInN islands. An island density as high as 1012 cm-2 is deduced from STM images. It is shown that the room-temperature photoluminescence (PL) of GaInN/GaN QDs can be tuned from 3 eV to 2.5 eV by increasing the GaInN thickness from 10 to 30 Å. Photothermal deflection spectroscopy is carried out to measure the absorption of GaInN/GaN QDs. For dots emitting at 2.63 eV, a Stokes shift of 250 meV is found between the maximum PL energy and the absorption edge indicating very strong carrier localization.