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IOP Publishing, Japanese Journal of Applied Physics, 4S(38), p. 2466, 1999

DOI: 10.1143/jjap.38.2466

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Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions

Journal article published in 1999 by Yuri A. Pashkin ORCID, Yasunobu Nakamura, Jaw-Shen Tsai
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We have measured resistively coupled single electron transistors under two bias conditions: asymmetric and symmetric. We observed a characteristic Coulomb blockade pattern whose shape is significantly different for the two cases. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data.