Published in
IOP Publishing, Japanese Journal of Applied Physics, 4B(35), p. L468, 1996
DOI: 10.1143/jjap.35.l468
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Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
Journal article published in 1996 by
Naoki Kaneda,
Theeradetch Detchprohm 
,
Kazumasa Hiramatsu,
Nobuhiko Sawaki
,
Kazumasa Hiramatsu,
Nobuhiko Sawaki
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Abstract
A Si-doped GaN layer was grown by MOVPE (metal-organic vapor phase epitaxy) using tetraethylsilane (TeESi) as the dopant. The Hall effect was studied between 11 K and 300 K. The electron concentration was observed to increase with the increase in the TeESi flow rate. The activation energy E D for ionization of shallow donors was determined to be 27 meV.