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IOP Publishing, Japanese Journal of Applied Physics, 7A(33), p. L959, 1994

DOI: 10.1143/jjap.33.l959

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Dissipation of Contact Electrified Electrons on Dielectric Thin films with Silicon Substrate

Journal article published in 1994 by Takahiro Okusako, Takayuki Uchihashi ORCID, Akihiko Nakano, Toru Ida, Yasuhiro Sugawara, Seizo Morita
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We studied microscopic contact electrification on three different kinds of dielectric thin films with the same silicon substrate, i.e., SiO2/Si, Si3N4/SiO2/Si (NOS) and SiO2/Si3N4/SiO2/Si, using a modified atomic force micro- scope (AFM). From the results, we clarified that reproducible and controllable contact electrification is possible on each sample. From the time evolution of the peak values and full widths at half-maximum (FWHMs) of electrostatic force due to contact-electrified electrons, we found that the stable-unstable phase transition occurs only on SiO2/Si and SiO2/Si3N4/SiO2/Si thin films with the SiO2 surface.