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Springer, Semiconductors, 6(48), p. 733-738, 2014

DOI: 10.1134/s1063782614060220

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On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate

Journal article published in 2014 by V. V. Romanov, M. V. Baidakova, K. D. Moiseev ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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