Published in
MAIK Nauka/Interperiodica, Russian Microelectronics, 4(43), p. 239-245
DOI: 10.1134/s1063739714040088
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Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary Hf x Al1 − x O y oxide films
Journal article published in 2014 by
O. M. Orlov,
A. A. Chuprik,
A. S. Baturin,
E. S. Gornev,
K. V. Bulakh,
K. V. Egorov,
A. A. Kuzin,
D. V. Negrov,
S. A. Zaitsev,
A. M. Markeev 
,
Y.-U. Y.-U. Lebedinskii,
A. V. Zablotskii
,
Y.-U. Y.-U. Lebedinskii,
A. V. Zablotskii
This paper was not found in any repository, but could be made available legally by the author.
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