Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 4(32), p. 041804
DOI: 10.1116/1.4890484
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Pattern transfer of hydrogen depassivation lithography patterns into silicon with atomically traceable placement and size control
Journal article published in 2014 by
Joshua B. Ballard,
James H. G. Owen,
William Owen,
Justin R. Alexander,
Ehud Fuchs,
John N. Randall,
James R. Von Ehr,
Stephen McDonnell,
Don D. Dick,
Robert M. Wallace 
,
Yves J. Chabal,
Maia R. Bischof,
David L. Jaeger,
Richard F. Reidy,
Joseph Fu
and other authors.
,
Yves J. Chabal,
Maia R. Bischof,
David L. Jaeger,
Richard F. Reidy,
Joseph Fu
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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