Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 3(29), p. 03C122, 2011
DOI: 10.1116/1.3565057
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Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric
Journal article published in 2011 by
W. H. Chang 
,
T. H. Chiang,
Y. D. Wu,
M. Hong,
C. A. Lin,
J. Kwo
,
T. H. Chiang,
Y. D. Wu,
M. Hong,
C. A. Lin,
J. Kwo
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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