Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 1(27), p. 463
DOI: 10.1116/1.3058740
Links
Tools
Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors
Journal article published in 2009 by
M. Aoulaiche,
B. Kaczer,
P.-H. J. Roussel,
R. O’Connor,
M. Houssa 
,
S. De Gendt,
H. E. Maes,
G. Groeseneken
,
S. De Gendt,
H. E. Maes,
G. Groeseneken
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 