Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 3(25), p. 1098
DOI: 10.1116/1.2713119
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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80nm) Si1−xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications
Journal article published in 2007 by
Michael M. Oye,
Davood Shahrjerdi,
Injo Ok,
Jeffrey B. Hurst,
Shannon D. Lewis,
Sagnik Dey,
David Q. Kelly,
Sachin Joshi,
Terry J. Mattord,
Xiaojun Yu,
Mark A. Wistey 
,
James S. Harris,
Archie L. Holmes,
Jack C. Lee,
Sanjay K. Banerjee
,
James S. Harris,
Archie L. Holmes,
Jack C. Lee,
Sanjay K. Banerjee
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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