Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 4(19), p. 1567
DOI: 10.1116/1.1376387
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Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110)
Journal article published in 2001 by
M. Meléndez-Lira,
M. A. Santana-Aranda,
M. López-López,
M. Tamura,
T. Yodo,
M. A. Vidal 
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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