Published in
IOP Publishing, Semiconductor Science and Technology, 11(29), p. 115013
DOI: 10.1088/0268-1242/29/11/115013
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Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs
Journal article published in 2014 by
S. Martin-Horcajo,
A. Wang,
M. F. Romero,
M. J. Tadjer,
A. D. Koehler,
T. J. Anderson,
F. Calle 
This paper was not found in any repository, but could be made available legally by the author.
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