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IOP Publishing, Journal of Physics D: Applied Physics, 28(44), p. 285301, 2011

DOI: 10.1088/0022-3727/44/28/285301

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Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

Journal article published in 2011 by Hock Guan Ong, Jun Wei Cheah, X. Zou, B. Li, X. H. Cao, Hosea Tantang, L.-J. Li, Hua Zhang ORCID, G. C. Han, J. Wang ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube–SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.