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Elsevier, Applied Surface Science, (113-114), p. 680-684, 1997

DOI: 10.1016/s0169-4332(96)00933-6

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Single-layer halftone phase-shifting masks for DUV microlithography: optical property simulation and chromium compound film preparation

Journal article published in 1997 by Zhong-Tao Jiang, Seungbum Hong ORCID, Eunah Kim, Byeong-Soo Bae, Sungchul Lim, Sang-Gyun Woo, Young-Bum Koh, Kwangsoo No
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The investigation of single layer halftone phase shift mask (SLHTPSM) has been carried by both simulation and chromium fluoride film fabrication. Theoretical analysis provides the optimum SLHTPSM constructions for I-line (365 nm), KrF (248 nm) and ArF (193 nm) microlithographies. A fully characterization of chromium fluoride film processed by de magnetron sputtering shows a feasibility of using this film in the fabricating DUV-PSM.