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Wiley, Advanced Materials, 12(28), p. 2322-2329, 2016

DOI: 10.1002/adma.201505070

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Parallel Stitching of 2D Materials

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This paper is available in a repository.

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Abstract

Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. The methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits. ; Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies (Award No. 023674) ; National Science Foundation (U.S.). Division of Materials Research. (Award No. 1004147) ; United States. Department of Energy. (Award No. DE-SC0001299) ; United States. Office of Naval Research. Presidential Early Career Award for Scientists and Engineers (Award No. 021302-001) ; United States. Department of Energy. (Contract No. DE-AC02-98CH10886) ; China. Ministry of Science and Technology. (MOST 103-2112-M-007-001-MY3)