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American Institute of Physics, Applied Physics Letters, 23(104), p. 232101

DOI: 10.1063/1.4882902

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Band gaps and internal electric fields in semipolar short period InN/GaN superlattices

Journal article published in 2014 by I. Gorczyca, K. Skrobas, T. Suski ORCID, N. E. Christensen, A. Svane
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The electronic structures and internal electric fields of semipolar short-period mInN/nGaN superlattices (SLs) have been calculated for several compositions (m, n). Two types of SL are considered, (112¯2) and (202¯1), corresponding to growth along the wurtzite s2 and s6 directions, respectively. The results are compared to similar calculations for polar SLs (grown in the c-direction) and nonpolar SLs (grown in the a- and m-directions). The calculated band gaps for the semipolar SLs lie between those calculated for the nonpolar and polar SLs: For s2-SLs they fall slightly below the band gaps of a-plane SLs, whereas for s6-SLs they are considerably smaller.