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American Institute of Physics, Applied Physics Letters, 21(103), p. 211103, 2013

DOI: 10.1063/1.4829477

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Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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