Published in
American Institute of Physics, Journal of Applied Physics, 16(114), p. 163713
DOI: 10.1063/1.4828869
Links
Tools
Analysis of electronic structure of amorphous InGaZnO/SiO2interface by angle-resolved X-ray photoelectron spectroscopy
Journal article published in 2013 by
Y. Ueoka,
Y. Ishikawa,
N. Maejima,
F. Matsui 
,
H. Matsui,
H. Yamazaki,
S. Urakawa,
M. Horita,
H. Daimon,
Y. Uraoka
,
H. Matsui,
H. Yamazaki,
S. Urakawa,
M. Horita,
H. Daimon,
Y. Uraoka
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 