Published in
American Institute of Physics, Applied Physics Letters, 3(103), p. 032102
DOI: 10.1063/1.4813598
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Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
Journal article published in 2013 by
Stéphane Brochen,
Julien Brault,
Sébastien Chenot,
Amélie Dussaigne,
Mathieu Leroux,
Benjamin Damilano 
This paper was not found in any repository, but could be made available legally by the author.
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