Published in
American Institute of Physics, Journal of Applied Physics, 7(113), p. 073505
DOI: 10.1063/1.4792505
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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
Journal article published in 2013 by
F. C.-P. Massabuau,
L. Trinh-Xuan,
D. Lodié,
E. J. Thrush,
D. Zhu,
F. Oehler 
,
T. Zhu,
M. J. Kappers,
C. J. Humphreys,
R. A. Oliver
,
T. Zhu,
M. J. Kappers,
C. J. Humphreys,
R. A. Oliver
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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