Published in
American Institute of Physics, Applied Physics Letters, 17(101), p. 179901
DOI: 10.1063/1.4762831
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Erratum: “Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors” [Appl. Phys. Lett. 101, 093308 (2012)]
Journal article published in 2012 by
Hongping Yan,
Torben Schuettfort,
Auke J. Kronemeijer,
Christopher R. McNeill 
,
Harald W. Ade
,
Harald W. Ade
This paper is made freely available by the publisher.
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