Published in
American Institute of Physics, Applied Physics Letters, 4(101), p. 042901
DOI: 10.1063/1.4737871
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Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks
Journal article published in 2012 by
M. A. Pawlak,
J. Swerts,
M. Popovici,
B. Kaczer,
M.-S. Kim,
W.-C. Wang,
K. Tomida,
B. Govoreanu,
J. Delmotte,
V. V. Afanas’ev,
M. Schaekers,
W. Vandervorst,
J. A. Kittl 
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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