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Elsevier, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1-3(520), p. 44-47

DOI: 10.1016/j.nima.2003.11.216

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Doped silicon and NIS junctions for bolometer applications

Journal article published in 2003 by Roberto Leoni ORCID, Bruno Buonomo, M. Gabriella Castellano, Francesco Mattioli ORCID, Guido Torrioli, Luciana Di Gaspare ORCID, Luciana Di Gaspare, Florestano Evangelisti
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This paper is available in a repository.

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Abstract

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.