Published in
American Institute of Physics, Journal of Applied Physics, 6(111), p. 063502
DOI: 10.1063/1.3693579
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Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy
Journal article published in 2012 by
R. Oliva,
J. Ibáñez,
R. Cuscó,
R. Kudrawiec,
J. Serafinczuk 
,
O. Martínez,
J. Jiménez,
M. Henini,
C. Boney,
A. Bensaoula,
L. Artús
,
O. Martínez,
J. Jiménez,
M. Henini,
C. Boney,
A. Bensaoula,
L. Artús
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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