Published in

American Institute of Physics, Applied Physics Letters, 16(99), p. 162511

DOI: 10.1063/1.3654148

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Electric control of magnetization relaxation in thin film magnetic insulators

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Control of magnetization relaxation in magnetic insulators via interfacial spin scattering is demonstrated. The experiments use nanometer-thick yttrium iron garnet (YIG)/Pt layered structures, with the Pt layer biased by an electric voltage. The bias voltage produces a spin current across the Pt thickness. As this current scatters off the YIG surface, it exerts a torque on the YIG surface spins. This torque can reduce or enhance the damping and thereby decrease or increase the ferromagnetic resonance linewidth of the YIG film, depending on the field/current configuration.