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American Institute of Physics, Journal of Applied Physics, 11(80), p. 6309-6314, 1996

DOI: 10.1063/1.363708

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Optimum channel thickness of Al0.3Ga0.7As/In0.25Ga0.75As/GaAs heterostructures for electron transport applications

Journal article published in 1996 by Y. Haddab, J.‐M-M. Bonard, S. Haacke ORCID, B. Deveaud
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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