Published in
American Institute of Physics, Journal of Applied Physics, 7(78), p. 4690-4695, 1995
DOI: 10.1063/1.359816
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A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1−xAs relaxed layers
Journal article published in 1995 by
A.‐L-L. Alvarez,
F. Calle 
,
A. Sacedón,
E. Calleja,
E. Muñoz,
J. Wagner,
M. Maier,
A. Mazuelas,
K. H. Ploog
,
A. Sacedón,
E. Calleja,
E. Muñoz,
J. Wagner,
M. Maier,
A. Mazuelas,
K. H. Ploog
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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