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American Institute of Physics, Applied Physics Letters, 6(98), p. 062108

DOI: 10.1063/1.3554375

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Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation

Journal article published in 2011 by C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang ORCID, Y. C. Chang, W.-E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, J. Kwo
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The pronounced high interfacial densities of states (Dit) commonly observed around the midgap energy of dielectric/GaAs interfaces are generally considered the culprit responsible for the poor electrical performance of the corresponding inversion-channel metal-oxide-semiconductor field-effect-transistors. In this work, comprehensive Dit spectra as the function of energy [Dit(E)] inside the In0.2Ga0.8As band gap were constructed by using the quasistatic capacitance-voltage and the temperature-dependent conductance method on n- and p-type ultrahigh vacuum (UHV)-Ga2O3(Gd2O3)/In0.2Ga0.8As and atomic-layer-deposited (ALD)-Al2O3/In0.2Ga0.8As metal-oxide-semiconductor capacitors. Unlike the ALD-Al2O3/In0.2Ga0.8As interface giving a Dit spectrum with a high midgap Dit peak, the UHV-Ga2O3(Gd2O3)/In0.2Ga0.8As interface shows a Dit spectrum that monotonically decreases from the valence band to the conduction band with no discernible midgap peak.