Imprint behavior of polycrystalline Bi3.25La0.75Ti3O12 thin films under stress was studied. The voltage shift along the positive voltage axis can be depressed by tensile stress while increased by compressive stress. With the measured voltage increasing, the voltage shift referred above increases and the increase trend gets enhanced under both compressive and tensile stress compared with that at zero stress. The asymmetric distribution of the trapped charged in films, which is caused by the increase of the in-plane polarization component for the domain reorientation induced by stress or for the voltage-assisted domain walls depinning, was considered the contribution to the voltage shift.