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American Institute of Physics, Applied Physics Letters, 11(95), p. 112501

DOI: 10.1063/1.3227840

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Engineering double-shifted hysteresis loops in Co/IrMn/Cu/Co films

This paper is available in a repository.
This paper is available in a repository.

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Abstract

Co ( 3 nm ) / IrMn ( 15 nm ) / Cu ( d Cu ) / Co ( 7 nm ) films were subjected to magnetic annealing where its temperature and duration as well as the direction and amplitude of the applied field were varied. We demonstrate that the exchange-bias field magnitude and sign of the subloop of the bottom-pinned Co layer can be tailored in a controlled manner allowing the whole hysteresis loop to be tuned from a double negatively/negatively shifted to a double negatively/positively shifted with the shifts of the subloops in antiphase.