Published in
American Institute of Physics, Journal of Applied Physics, 4(106), p. 044909
DOI: 10.1063/1.3204026
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Extrinsic interface formation of HfO2 and Al2O3∕GeOx gate stacks on Ge (100) substrates
Journal article published in 2009 by
H. Seo,
F. Bellenger,
K. B. Chung,
M. Houssa 
,
M. Meuris,
M. Heyns,
G. Lucovsky
,
M. Meuris,
M. Heyns,
G. Lucovsky
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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