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American Institute of Physics, Applied Physics Letters, 20(94), p. 203502

DOI: 10.1063/1.3140962

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Effect of annealing on the performance of CrO3/ZnO light emitting diodes

Journal article published in 2009 by Y. Y. Xi, A. M. C. Ng ORCID, Y. F. Hsu, A. B. Djurišić, B. Q. Huang, L. Ge, X. Y. Chen, W. K. Chan, H. L. Tam, K. W. Cheah
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.