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American Institute of Physics, Journal of Applied Physics, 8(105), p. 083505

DOI: 10.1063/1.3089215

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Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.

Journal article published in 2009 by M. Portail, M. Zielinski, T. Chassagne ORCID, S. Roy, M. Nemoz
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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