Dissemin is shutting down on January 1st, 2025

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American Institute of Physics, Applied Physics Letters, 4(94), p. 042114

DOI: 10.1063/1.3077188

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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Journal article published in 2009 by Jie Sun ORCID, Marcus Larsson, Ivan Maximov ORCID, Hilde Hardtdegen, H. Q. Xu ORCID
This paper is available in a repository.
This paper is available in a repository.

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