Dissemin is shutting down on January 1st, 2025

Published in

American Institute of Physics, Applied Physics Letters, 10(93), p. 101913

DOI: 10.1063/1.2981524

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Atomic structure of the interface between SrTiO3 thin films and Si(001) substrates

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

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Preprint: archiving allowed
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Postprint: archiving allowed
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Data provided by SHERPA/RoMEO

Abstract

The structure of the SrTiO3/Si interface is determined by high-angle annular dark field imaging in combination with a recently developed technique based on aberration-corrected high-resolution transmission electron microscopy. At the interface, a monolayer of SrO faces the terminating plane of silicon. In this monolayer, the strontium atoms lie above the face-center of four silicon atoms in the terminating plane, and the oxygen atoms are located directly above the terminating silicon atoms. This structure, which is the dominant type of interface structure observed in this system, agrees with one of the interface structures predicted by first-principles calculations.