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American Institute of Physics, Applied Physics Letters, 4(91), p. 041905

DOI: 10.1063/1.2762290

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Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector

Journal article published in 2007 by B. S. Ma, W. J. Fan ORCID, Y. X. Dang, W. K. Cheah, S. F. Yoon
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Annealing effects in a GaInNAs∕AlAs∕AlGaAs double barrier quantum well infrared photo detector were studied by x-ray diffraction, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. After annealing at 650°C, the GaInNAs PL peak shows stronger PL intensity and blueshift of 40meV mainly due to the group-III interdiffusion. As the annealing temperature increases to 825°C, the blueshift decreases from 40to15meV due to the nitrogen substitutional-interstitional kickout effect, Al∕Ga interdiffusion at the AlAs∕AlGaAs interface, and strain reduction. After annealing, the difference between the PLE peak energy and the detection energy decreases with increasing detection energy because of the redistribution of elemental concentrations.