Direct observation of the dynamics, formation, and selective growth of low dimensional epitaxial Fe13Ge8 structures [zero-dimensional (0D) compact islands or one-dimensional (1D) wires of different aspect ratios] was conducted in real time using in situ ultra high vacuum transmission electron microscopy at 350, 430, 480, and 510°C. Both types of island (0D/1D) share the same epitaxial relation to the underlying Ge substrate. The compact islands are formed preferentially at lower deposition temperature while wires, which are kinetically constrained, at higher temperature. The effective Ea for growth along two orthogonal azimuths of an Fe13Ge8 island are 0.17 and 0.95eV. The temperature dependence in morphological evolution is due to anisotropy in corner barriers and ledge diffusion on orthogonal azimuths during growth.