Published in
American Institute of Physics, Applied Physics Letters, 23(88), p. 232106
DOI: 10.1063/1.2210087
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Improvement of resistive memory switching in NiO using IrO2
Journal article published in 2006 by
D. C. Kim,
M. J. Lee 
,
S. E. Ahn,
S. Seo,
J. C. Park,
I. K. Yoo,
I. G. Baek,
H. J. Kim,
E. K. Yim,
J. E. Lee,
S. O. Park,
H. S. Kim,
U.-In Chung,
J. T. Moon,
B. I. Ryu
,
S. E. Ahn,
S. Seo,
J. C. Park,
I. K. Yoo,
I. G. Baek,
H. J. Kim,
E. K. Yim,
J. E. Lee,
S. O. Park,
H. S. Kim,
U.-In Chung,
J. T. Moon,
B. I. Ryu
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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