Published in
American Institute of Physics, Applied Physics Letters, 10(88), p. 101904
DOI: 10.1063/1.2182028
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Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy
Journal article published in 2006 by
D. Dagnelund,
I. A. Buyanova,
T. Mchedlidze 
,
W. M. Chen,
A. Utsumi,
Y. Furukawa,
A. Wakahara,
H. Yonezu
,
W. M. Chen,
A. Utsumi,
Y. Furukawa,
A. Wakahara,
H. Yonezu
This paper was not found in any repository, but could be made available legally by the author.
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