Published in
American Institute of Physics, Applied Physics Letters, 10(88), p. 103502
DOI: 10.1063/1.2182011
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Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias
Journal article published in 2006 by
A. Sarua 
,
Hangfeng Ji,
M. Kuball,
M. J. Uren ,
T. Martin,
K. J. Nash,
K. P. Hilton,
R. S. Balmer
,
Hangfeng Ji,
M. Kuball,
M. J. Uren ,
T. Martin,
K. J. Nash,
K. P. Hilton,
R. S. Balmer
This paper was not found in any repository, but could be made available legally by the author.
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